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| SFP75N08R SFP7 N08R Silicon N-Channel MOSFET Features RDS(on)(Max 15m)@VGS=10V Ultra-low Gate Charge(Typical 80nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(175) General Description This power MOSFET is produced in Winsemi with advanced DMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switchingtime, low on resistance, low gate charge and especially excellent avalanche characteristics. This Devices are well suited for low voltage application such as automotive, DC/DC Converters, and high efficiency switch for power management in portable and battery operated products G D S TO220 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25) Continuous Drain Current(@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) Derating Factor above 25 Junction Temperature Storage Temperature Maximum lead temperature for soldering purposes (for 5 seconds) (Note 2) (Note 3) (Note 2) (Note1) Parameter Value 80 75 52.6 300 20 13100 75 17.3 7.3 173 1.15 175 -55~150 300 Units V A A A V mJ A mJ V/ns W W/ Thermal Characteristics Symbol RQJC RQcs RQJA Parameter Thermal Resistance, Junction-to-Case Case-to-Sink, Flat, Greased Surface Thermal Resistance, Junction-to-Ambient Min - Value Typ 0.5 Max 0.87 Units /W /W - - 62.5 /W Rev, B Nov.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T03-3 SFP75N08R SFP7 N08R Electrical Characteristics (Tc = 25C) 25 Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Breakdown Coefficient Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus Qg gate-drain) Gate-source charge Gate-drain ("miller") Charge Qgs Qgd tf toff Voltage Temperature Symbol IGSS V(BR)GSS IDSS Test Condition VGS = 20 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 80 V, VGS = 0 V VDS = 64V, Tc = 125C Min 20 80 2 - Type 0.08 12 15 2600 940 210 30 225 165 155 80 15 32 Max 100 10 100 4 15 3380 1229 275 70 460 Unit nA V A A V V/ V m s V(BR)DSS BVDS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton ID = 250 A, VGS = 0 V ID = 1mA, Referenced to 25 VDS = 10 V, ID =250 A VGS = 10 V, ID = 37.5A VDS=25V, ID = 37.5A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD=40V ID =75A RG =25 VGS =10V VDD =64 V, VGS = 10 V, (Note4,5) pF ns 340 320 105 nC (Note4,5) - ID =48 A Source-Drain Ratings and Characteristics (Ta = 25C) Source- 25 Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Note Symbol IDR IDRP VDSF trr Qrr Test Condition IDR =75A, VGS = 0 V IDR =75A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type 90 250 Max 75 300 1.4 - Unit A A V ns C 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=75A, RG=20, Starting TJ=25 3. ISD48A, di/dt300A/s, VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300s,Duty Cycle2% 5. Essentially independent of operating temperature This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance SFP75N08R SFP7 N08R Fig. 1 Transfer Characteristics Fig.2 On-Statet Characteristics Fig.3 Typical Capacitance Characteristics Fig.4 On-Resistance Variation vs Drain Current and Gate Voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance SFP75N08R SFP7 N08R Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance SFP75N08R SFP7 N08R Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP75N08R SFP7 N08R Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP75N08R SFP7 N08R TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
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